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| Ordering number : ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A Features * UHF to S-Band Low-Noise Amplifier OSC Applications Low-noise * * * * : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). High gain : S21e2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5GHz typ. : S21e2=5.5dB typ (f=1.5GHz). Ultrasmall-sized package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 1.5 30 100 150 --55 to +150 Unit V V V mA mW C C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001687 No. A1075-1/6 2SC5277A Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 S21e 1 S21e22 Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=1V, IC=1mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=10mA, f=1.5GHz VCE=1V, IC=1mA, f=1.5GHz VCE=5V, IC=5mA, f=1.5GHz VCE=2V, IC=3mA, f=1GHz Ratings min typ max 1.0 10 60* 5 8 3.5 0.45 0.30 8 10 5.5 1.4 0.9 3.0 0.7 270* Unit A A GHz GHz pF pF dB dB dB dB NF1 NF2 * : The 2SC5277A is classified by 10mA hFE as follows : Marking Rank hFE D1 1 60 to 120 D2 2 90 to 180 D3 3 135 to 270 Package Dimensions unit : mm (typ) 7027-002 1.6 0.8 0.4 0.4 0.2 1.6 0.5 0.5 1 2 3 0.1 0.3 0 to 0.1 0.1 MIN 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP 0.75 0.6 5 3 2 hFE -- IC VCE=5V 2 fT -- IC Gain-Bandwidth Product, fT -- GHz 10 7 5 DC Current Gain, hFE 100 7 5 3 2 =5V VCE =1V VCE 3 2 10 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 ITR08213 1.0 1.0 2 3 5 7 10 2 3 5 IT14098 Collector Current, IC -- mA Collector Current, IC -- mA No. A1075-2/6 2SC5277A 5 3 Cob -- VCB f=1MHz 5 Cre -- VCB f=1MHz Reverse Transfer Capacitance, Cre -- pF 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 2 Output Capacitance, Cre -- pF 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 12 ITR08215 12 Collector-to-Base Voltage, VCB -- V ITR08216 NF -- IC f=1.5GHz NF -- IC VCE=2V f=1GHz 10 10 Noise Figure, NF -- dB Noise Figure, NF -- dB 8 8 6 6 1V 4 4 2 V CE = 5V 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 16 Collector Current, IC -- mA S21e2 -- I ITR08217 16 C Collector Current, IC -- mA S21e2 -- I ITR08218 C f=1.5GHz f=1GHz =5V VCE 2V 1V Forward Transfer Gain,S21e2 -- dB 14 12 Forward Transfer Gain,S21e2 -- dB 14 12 10 8 6 4 2 0 =5V VCE 10 8 6 4 2 0 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 120 PC -- Ta 2V 1V 2 3 7 100 ITR08219 5 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 ITR08220 Collector Dissipation, PC -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C ITR08221 No. A1075-3/6 2SC5277A S Parameters S11e f=200MHz to 2000MHz(200MHz Step) j50 j25 120 j100 j150 25 S21e f=200MHz to 2000MHz(200MHz Step) 90 j10 j200 j250 150 --j10 0.2 GH z 0.2 G 0.2 Hz GH 0.2z GH z 0 10 50 100 150 250 180 --j25 V IC CE =1 =1 V mA --j50 --j250 --j200 --j150 V IC CE = =5 5V 0.2 0.2 0 m A GH GH .2G z z Hz 0 .2 V GH C IC = E =5V z 10m A 2.0 GH z 2.0 GH 2.0 z GH z 60 --60 --90 j50 150 25 2.0 GH VC = E 1V z V IC =1mA 30 =2 E mA V C =3 IC S12e f=200MHz to 2000MHz(200MHz Step) 90 120 60 4 8 12 16 20 0.2 0 0 10 --j10 --150 --30 --j25 --120 --90 --60 ITR08224 --j50 0.2GH z 0.2GH z 0.2 0.2G GH Hz z ITR08225 V CE = 0.2GHz IC =1 5V 0m A 150 5V E= A VC m I C=5 Hz G 0.2 =2V 180 V CE mA z 3 H I C= 2G 0. GH Vz CE IC =1 =1V mA V =5 E mA V C =5 IC V =5 E mA V C =10 IC 2.0GHz z 2.0GHGHz 2.0 0GHz 2. z GH z z 2.0 GH GH 2.0 z 2.0 GH 2.0 0.04 0.08 0.12 0.16 0.2 0 --150 --30 VCE=2V IC=3mA --j100 --120 ITR08222 ITR08223 S22e f=200MHz to 2000MHz(200MHz Step) j25 j100 j150 30 j10 j200 j250 250 V= 100 I CE 5V 50 C =5mA VCE =5 V IC =10m A 2.0GHz 2.0GHz --j250 z --j200 2.0GH V z V CE=1 --j150 2.0GH =1mA VCE=2V I C --j100 3mA IC= No. A1075-4/6 2SC5277A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.782 0.623 0.502 0.420 0.369 0.339 0.311 0.296 0.285 0.277 S11 --37.1 --65.4 --85.6 --102.4 --114.7 --127.2 --137.2 --144.9 --156.5 --164.2 S21 12.043 9.431 7.415 6.000 5.025 4.323 3.785 3.391 3.018 2.767 S21 148.4 126.6 112.2 101.5 93.6 86.7 80.6 75.3 70.1 65.7 S12 0.038 0.057 0.072 0.083 0.094 0.105 0.115 0.127 0.139 0.150 S12 69.7 60.8 56.5 55.2 55.1 55.6 55.6 56.7 56.4 56.7 S22 0.889 0.758 0.646 0.577 0.538 0.513 0.490 0.480 0.466 0.460 S22 --19.5 --28.3 --33.3 --35.9 --37.6 --38.7 --39.7 --41.3 --43.5 --45.5 VCE=5V, IC=10mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.641 0.468 0.377 0.321 0.293 0.280 0.266 0.263 0.263 0.264 S11 --52.7 --85.4 --106.6 --124.1 --136.1 --146.7 --156.6 --163.2 173.5 179.8 S21 16.527 11.299 8.303 6.502 5.342 4.546 3.947 3.527 3.121 2.864 S21 137.8 115.7 103.1 94.0 87.4 81.4 76.4 71.4 67.0 62.8 S12 0.031 0.048 0.060 0.072 0.084 0.097 0.108 0.123 0.136 0.150 S12 67.4 60.5 60.0 60.9 61.9 62.7 63.0 63.7 62.8 62.4 S22 0.820 0.643 0.549 0.499 0.477 0.462 0.449 0.444 0.435 0.434 S22 --22.9 --30.2 --32.2 --33.2 --33.9 --35.0 --36.2 --37.8 --39.9 --42.4 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.851 0.724 0.612 0.521 0.461 0.423 0.382 0.366 0.341 0.333 S11 --30.4 --55.7 --76.1 --93.0 --106.1 --118.6 --129.4 --138.0 --148.8 --157.7 S21 8.644 7.310 6.083 5.085 4.343 3.806 3.349 3.036 2.685 2.479 S21 154.1 133.8 118.6 106.9 98.1 90.0 83.3 77.5 71.7 66.7 S12 0.042 0.073 0.093 0.107 0.118 0.128 0.137 0.147 0.157 0.167 S12 73.0 61.3 54.2 50.4 48.3 47.5 46.9 47.4 47.2 47.6 S22 0.937 0.820 0.709 0.628 0.572 0.536 0.506 0.485 0.463 0.453 S22 --16.4 --27.9 --35.7 --40.4 --43.7 --45.8 --47.3 --49.5 --51.9 --54.1 VCE=1V, IC=1mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.945 0.892 0.826 0.754 0.691 0.639 0.589 0.558 0.522 0.490 S11 --18.7 --36.9 --52.9 --67.9 --81.1 --94.3 --104.9 --114.1 --124.4 --134.9 S21 3.431 3.263 3.004 2.765 2.539 2.366 2.143 1.969 1.797 1.701 S21 162.9 147.1 133.2 120.4 109.9 99.8 91.2 83.6 76.2 69.7 S12 0.053 0.099 0.136 0.164 0.184 0.199 0.207 0.213 0.218 0.219 S12 78.1 66.9 57.5 49.7 43.4 38.4 34.1 31.7 28.7 27.0 S22 0.982 0.939 0.879 0.815 0.758 0.727 0.683 0.653 0.621 0.601 S22 --10.3 --19.7 --27.7 --34.8 --40.0 --44.3 --47.8 --51.4 --54.9 --58.1 No. A1075-5/6 2SC5277A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1075-6/6 |
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